지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.22 No.1
- 발행연도
- 2022.2
- 수록면
- 24 - 29 (6page)
- DOI
- 10.5573/JSTS.2022.22.1.24
이용수
초록· 키워드
오류제보하기
In this work, the hump characteristics induced by bias and light stresses are investigated through electrical measurements at various temperatures and TCAD simulations. To verify the origin of the hump current, transfer characteristics and source-to-drain currents with floated gate (S/D current) are measured at various temperatures. As a result, it is found that the source and drain (S/D) metals contacted with the active α-HIZO form the oppositely connected Schottky barrier diodes (SBD). Also, from the S/D current measurements after applying the stresses and TCAD simulations, it is revealed that the stress-induced enhancement of the S/D current can be understood that the trapped holes at the edge regions along the channel width direction make the Schottky barrier narrowing near the source-side edge regions and the hump occurs by the increase of the thermal generation and thermionic field emission current in the reverse-biased Schottky contact.
목차
Abstract
I. INTRODUCTION
II. DEVICE FABRICATION
III. EXPERIMENTAL RESULTS AND DISCUSSIONS
IV. CONCLUSION
REFERENCES
참고문헌 (20)
참고문헌 신청
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G. Gonçalves, P. Barquinha, L. Raniero, R. Martins, and E. Fortunato, “Crystallization of amorphous indium zinc oxide thin films produced by radiofrequency magnetron sputtering,” Thin Solid Films, Vol. 516, No. 7, pp. 1374-1376, 2008, doi: 10.1016/j.tsf.2007.03.087.
C. Kim et al., “Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors,” Appl. Phys. Lett., Vol. 252103, No. 2009, pp. 1-4, Dec. 2012, doi: 10.1063/1.3275801.
Y. Gao, X. Li, L. Chen, J. Shi, X. W. Sun, and J. Zhang, “High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric,” IEEE Electron Device Letters, Vol. 35, No. 5, pp. 554-556, 2014, doi: 10.1109/LED.2014.2310120.
J. H. Kim, J. Chang, S. Kim, and B.-G. Park, “Oxide Thin Film Transistor With a Novel Gate Insulator Stack to Suppress Photo-Excited Charge Injection,” IEEE Transactions on Nanotechnology, Vol. 18, pp. 491-493, 2019, doi: 10.1109/TNANO. 2019.2915170.
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