지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
오류제보하기
The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.
목차
등록된 정보가 없습니다.
참고문헌 (18)
참고문헌 신청
N. Tanaka / 2015 / Appl. Phys. Exp 8:071001
V. Bahagwat / 2006 / J. Electronic. Mater 35:1613
Germà Garcia-Belmonte / 2009 / Perimeter leakage current in polymer light emitting diodes / Current Applied Physics 9(3):414~416
A. Willis / 1990 / Solid State Electron 33:531
A. Dimoulas / 2006 / Appl. Phys. Lett 89:252110
V. Bahagwat / 2006 / J. Electronic. Mater 35:1613
Germà Garcia-Belmonte / 2009 / Perimeter leakage current in polymer light emitting diodes / Current Applied Physics 9(3):414~416
A. Willis / 1990 / Solid State Electron 33:531
A. Dimoulas / 2006 / Appl. Phys. Lett 89:252110
함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Electron Transport Mechanisms in Ag Schottky Contacts Fabricated on O-polar and Nonpolar m-plane Bulk ZnO
Transactions on Electrical and Electronic Materials
2015 .01
-
Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge
한국재료학회지
2016 .01
-
Effect of Recombination and Decreasing Low Current on Barrier Potential of Zinc Tin Oxide Thin-Film Transistors According to Annealing Condition
Journal of information and communication convergence engineering
2019 .06
-
Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN
Transactions on Electrical and Electronic Materials
2018 .04
-
Effect of Graphene oxide Interlayer on Schottky Barrier Height Reduction of Metal/n-Ge contact
대한전기학회 학술대회 논문집
2021 .10
-
Top and Bottom Gate Voltage Dependent Tunneling Current of Asymmetric DGMOSFET
INTERNATIONAL CONFERENCE ON FUTURE INFORMATION & COMMUNICATION ENGINEERING
2015 .06
-
터널링 효과를 이용한 공작물 좌표계 설정
한국정밀공학회 학술발표대회 논문집
2023 .11
-
Diffusion Currents in the Amorphous Structure of Zinc Tin Oxide and Crystallinity-Dependent Electrical Characteristics
Transactions on Electrical and Electronic Materials
2017 .08
-
A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes
Transactions on Electrical and Electronic Materials
2024 .04
-
Reverse-bias Leakage Current Mechanisms in Cu/n-type Schottky Junction Using Oxygen Plasma Treatment
Transactions on Electrical and Electronic Materials
2016 .01
-
군을 이루는 접촉면 분포에 따른 전기접촉저항
한국트라이볼로지학회 학술대회
2017 .10
-
A Study on Contact Resistance Reduction in Ni Germanide/Ge using Sb Interlayer
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2016 .04
-
Analysis of material dependency in an elastic - plastic contact models using contact mechanics approach
Structural engineering and mechanics : An international journal
2015 .01
-
트라이볼로지 손상을 억제하기 위한 구조물 모서리부 설계 : 제1부 - 설계공식 개발
Tribology and Lubricants
2015 .08
-
Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2022 .02
-
Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2015 .02
-
Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2016 .04
-
Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors
센서학회지
2017 .01
-
The contact problem of the functionally graded layer resting on rigid foundation pressed via rigid punch
Steel and Composite Structures, An International Journal
2022 .06
-
Analysis of material dependency in an elastic - plastic contact models using contact mechanics approach
Structural Engineering and Mechanics, An Int＇l Journal
2015 .01
이 논문의 저자 정보
최근 본 자료
댓글(0)
0