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논문 기본 정보
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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제17권 제2호
- 발행연도
- 2016.1
- 수록면
- 113 - 117 (5page)
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Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. VP possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.
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참고문헌 (24)
참고문헌 신청
P. Cova / 1998 / Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy / Solid-State Electronics 42(4):477~485
Han Zhao / 2008 / Inversion-Type InP MOSFETs with EOT of 21 Å Using Atomic Layer Deposited Al[sub 2]O[sub 3] Gate Dielectric / Electrochemical and Solid-State Letters 11(8):H233
Y. Wang / 2013 / Near resonant and nonresonant third-order optical nonlinearities of colloidal InP/ZnS quantum dots / Applied Physics Letters 102(2):021917
A. Singh / 1990 / Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions / Journal of Applied Physics 68(7):3475
K. Hattori / 1991 / A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer / Solid-State Electronics 34(5):527~531
Han Zhao / 2008 / Inversion-Type InP MOSFETs with EOT of 21 Å Using Atomic Layer Deposited Al[sub 2]O[sub 3] Gate Dielectric / Electrochemical and Solid-State Letters 11(8):H233
Y. Wang / 2013 / Near resonant and nonresonant third-order optical nonlinearities of colloidal InP/ZnS quantum dots / Applied Physics Letters 102(2):021917
A. Singh / 1990 / Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions / Journal of Applied Physics 68(7):3475
K. Hattori / 1991 / A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer / Solid-State Electronics 34(5):527~531
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