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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국정보통신학회JICCE Journal of information and communication convergence engineering Journal of information and communication convergence engineering Vol.17 No.2
- 발행연도
- 2019.6
- 수록면
- 161 - 165 (5page)
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In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.
목차
Abstract
I. INTRODUCTION
II. EXPERMENTAL METHODS
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
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