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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.16 No.5
- 발행연도
- 2016.10
- 수록면
- 664 - 674 (11page)
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초록· 키워드
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The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENT
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (41)
참고문헌 신청
[학술지(정기간행물)] - J. Chen / 2015 / Current-voltage-temperature and capacitancevoltage-temperature characteristics of TiW alloy/p-InP Schottky barrier diode / J. Alloy. Compd 649 : 1220 ~ 1225
[학술지(정기간행물)] - B. Akkal / 2006 / Illumination dependence of I–V and C–V characterization of Au/InSb/InP(1 0 0)Schottky structure / Appl. Surf. Sci 253 (3) : 1065 ~ 1070
[학술지(정기간행물)] - V. Janardhanam / 2010 / Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers / J. Alloy. Compd 504 : 146 ~ 150
[학술지(정기간행물)] - O. F. Yuksel / 2013 / The modification of Schottky barrier height of Au/p-Si Schottkydevices by perylene-diimide / J. Appl. Phys 113 : 044507-1 ~ 044507-9
[학술지(정기간행물)] - N. Kavasoglu / 2009 / Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure / Synth. Met. 159 (17) : 1880 ~ 1884
[학술지(정기간행물)] - B. Akkal / 2006 / Illumination dependence of I–V and C–V characterization of Au/InSb/InP(1 0 0)Schottky structure / Appl. Surf. Sci 253 (3) : 1065 ~ 1070
[학술지(정기간행물)] - V. Janardhanam / 2010 / Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers / J. Alloy. Compd 504 : 146 ~ 150
[학술지(정기간행물)] - O. F. Yuksel / 2013 / The modification of Schottky barrier height of Au/p-Si Schottkydevices by perylene-diimide / J. Appl. Phys 113 : 044507-1 ~ 044507-9
[학술지(정기간행물)] - N. Kavasoglu / 2009 / Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure / Synth. Met. 159 (17) : 1880 ~ 1884
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