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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제4호
- 발행연도
- 2015.1
- 수록면
- 187 - 189 (3page)
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초록· 키워드
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A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×105 and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm2/V·s at a drain voltage of -1 V, respectively.
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참고문헌 (9)
참고문헌 신청
Chung-Kuang Huang / 1998 / Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm / IEEE Transactions on Electron Devices 45 (4) : 842 ~
J.M. Larson / 2006 / Overview and status of metal S/D Schottky-barrier MOSFET technology / IEEE Transactions on Electron Devices 53 (5) : 1048 ~ 1058
Meng Zhang / 2014 / Water-enhanced negative bias temperature instability in p-type low temperature polycrystalline silicon thin film transistors / Microelectronics Reliabilit
Mika Nishisaka / 2003 / Schottky Source/Drain SOI MOSFET with Shallow Doped Extension / Japanese Journal of Applied Physics 42 (Part 1, No. 4B) : 2009 ~ 2013
Moongyu Jang / 2004 / A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor / Applied Physics Letters 84 (5) : 741 ~
J.M. Larson / 2006 / Overview and status of metal S/D Schottky-barrier MOSFET technology / IEEE Transactions on Electron Devices 53 (5) : 1048 ~ 1058
Meng Zhang / 2014 / Water-enhanced negative bias temperature instability in p-type low temperature polycrystalline silicon thin film transistors / Microelectronics Reliabilit
Mika Nishisaka / 2003 / Schottky Source/Drain SOI MOSFET with Shallow Doped Extension / Japanese Journal of Applied Physics 42 (Part 1, No. 4B) : 2009 ~ 2013
Moongyu Jang / 2004 / A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor / Applied Physics Letters 84 (5) : 741 ~
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