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논문 기본 정보

자료유형
학술저널
저자정보
Jae-Geun Lim (Sogang University) Je-Min Jeon (Samsung Electronics) Jun-Ho Boo (Sogang University) Yoon-Bin Im (Sogang University) Jae-Hyuk Lee (Sogang University) Sung-Han Do (Samsung Electronics) Young-Jae Cho (Samsung Electronics) Michael Choi (Samsung Electronics) Gil-Cho Ahn (Sogang University) Seung-Hoon Lee (Sogang University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.21 No.4
발행연도
2021.8
수록면
255 - 262 (8page)
DOI
10.5573/JSTS.2021.21.4.255

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This work proposes two versions of a 12 b 100 MS/s successive-approximation register (SAR) ADC based on a non-binary C-R hybrid DAC. The proposed DAC applies a non-binary weighted capacitor array to the 7 MSBs to meet the settling requirement of the DAC output and determines the remaining 5 LSBs using the reference voltages generated from a simple resistor string to reduce the DAC area significantly. The Version 1 ADC in a 28 ㎚ CMOS adopts a synchronous SAR logic and a comparator with a tail capacitor and a reset switch to minimize power consumption. The Version 2 ADC in a 0.18 ㎛ CMOS employs an asynchronous SAR logic with simple meta-stability correction logic to achieve high-speed operation. The Version 1 ADC which has an active die area of 0.042 ㎟ shows a maximum signal-to-noise-and-distortion ratio (SNDR) and spurious-free dynamic range (SFDR) of 62.3 and 77.3 ㏈, respectively, consuming 1.3 ㎽ with a 1.0 V supply voltage. The Version 2 ADC is based on a similar analog circuit topology, showing a maximum SNDR and SFDR of 60.1 and 73.5 ㏈, respectively, with an active die area of 0.30 ㎟, operating at a 1.8 V supply voltage.

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Abstract
Ⅰ. INTRODUCTION
Ⅱ. PROPOSED SAR ADC TOPOLOGY
Ⅲ. CIRCUIT DESCRIPTION
Ⅳ. MEASUREMENT RESULTS
Ⅴ. CONCLUSIONS
REFERENCES

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