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논문 기본 정보

자료유형
학술저널
저자정보
Jae-Hyuk Lee (Sogang University) Jun-Ho Boo (Sogang University) Jun-Sang Park (Samsung Electronics) Tai-Ji An (Samsung Electronics) Hee-Wook Shin (Samsung Electronics) Young-Jae Cho (Samsung Electronics) Michael Choi (Samsung Electronics) Jin-Wook Burm (Sogang University) Gil-Cho Ahn (Sogang University) Seung-Hoon Lee (Sogang University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.23 No.2
발행연도
2023.4
수록면
118 - 127 (10page)
DOI
10.5573/JSTS.2023.23.2.118

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This work proposes a single-channel 11-bit successive-approximation register (SAR) analog-to-digital converter (ADC) with an operating speed of 160-MS/s based on a non-binary digital-to-analog converter (DAC) for settling error correction. In the proposed DAC, a non-binary-weighted structure with redundancy is employed for the upper 8-bit capacitor array to reduce the residual voltage settling time requirement, facilitating high-speed operation. The remaining 3-bit capacitor array is composed of three unit capacitors, which are attached to the fractional reference voltages generated from a resistor string (R-string). The proposed partially monotonic switching scheme reduces the switching power consumption and the common-mode voltage variations of the DAC output voltage. The proposed 3D-encapsulated capacitor layout reduces the interference of adjacent signals while securing the high linearity of capacitors. Implemented in a 28 nm CMOS, the proposed ADC consumes 1.67 mW of power with a 1.0 V supply voltage and occupies an active area of 0.026 mm². The prototype ADC achieves a signal-to-noise-and-distortion-ratio (SNDR) and a spurious-free-dynamic-range (SFDR) of 53.5 dB and 67.5 dB, with a 9 MHz input at 160 MS/s, respectively.

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Abstract
I. INTRODUCTION
II. PROPOSED SAR ADC ARCHITECTURE
III. CIRCUIT IMPLEMENTATION
IV. MEASUREMENT RESULTS
V. CONCLUSION
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