Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

Ki Hwan SEOK; Hyung Yoon Kim; Jae Hyo Park; Sol Kyu Lee; Yong Hee Lee; Seung Ki Joo

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자료유형: 학술저널

저자정보: Ki Hwan SEOK (Seoul National University) Hyung Yoon Kim (Seoul National University) Jae Hyo Park (Seoul National University) Sol Kyu Lee (Seoul National University) Yong Hee Lee (Seoul National University) Seung Ki Joo (Seoul National University)

저널정보: 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.16 No.2

발행연도: 2016.4

수록면: 166 - 171 (6page)

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Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.

#Polycrystalline silicon (Poly-Si) #nickel silicide #metal induced lateral crystallization (MILC) #edge cut (EC)

참고문헌 (13)

참고문헌 신청

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