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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2024.9
- 수록면
- 648 - 656 (9page)
- DOI
- https://doi.org/10.1007/s13391-024-00508-w
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초록· 키워드
오류제보하기
Efficient heat energy management during operation remains a critical challenge in Phase Change Memory (PCM) devices.
Reducing the thermal conductivity of electrodes has emerged as a promising strategy to address this issue. Amorphous carbon(a-C) thin fi lms present an attractive option for PCM electrodes due to their intrinsically low thermal conductivity andtunable electrical properties. This study focuses on the development of a-C thin fi lms with optimized electrical and thermalcharacteristics by controlling the sputtering pressure and conducting post-annealing treatments. Various analytical techniques,including X-ray photoelectron spectroscopy, time-of-fl ight secondary ion mass spectrometry, and Raman spectroscopy, wereemployed to investigate the microstructure and composition of the a-C thin fi lms. The results demonstrate that the optimalcondition for achieving improved electrical and thermal properties is at the lowest sputtering pressure (2.5 mTorr), whichis attributed to the reduced impurity content (specifi cally oxygen and hydrogen) and denser fi lm structure. Furthermore,post-annealing treatment at 400 °C for 30 min resulted in further improvements in thermal and electrical properties due tothe formation of sp 2 clusters and the reduction of impurities within the fi lm. Consequently, the post-annealed a-C thin fi lmexhibited an outstanding low thermal conductivity of 1.34 W m −1 K −1 and an adequate electrical resistivity of 0.02 Ω cm.
The fi ndings of this work provide valuable insights into the underlying mechanisms governing the electrical and thermalproperties of a-C thin fi lms, paving the way for the development of energy-Efficient PCM devices.
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