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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제19권 제1호
- 발행연도
- 2018.2
- 수록면
- 1 - 6 (6page)
- DOI
- https://doi.org/10.1007/s42341-018-0006-z
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초록· 키워드
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We investigated the stoichiometry of silicon nitride fi lm deposited by plasma-enhanced chemical vapor deposition (PECVD).
Lowering the NH 3 /SiH 4 gas fl ow ratio resulted in slightly Si-rich fi lm due to the lack of reactive nitrogen in the plasma. Itmay reduce the fi lm stress, but the refractive index of Si-rich nitride fi lm can be increased by 50% at its maximum. The aforementionedstress adjustment methods are made practically useful by performing multiple experiments to achieve immediatestress release. It suff ers from fi gures of merit of the PECVD-deposited silicon nitride fi lm. Thin fi lm stress was measured bothbefore and after deposition, and the stoichiometry of deposited fi lm on wafer was measured by Fourier transform-infrared(FT-IR) spectroscopy, while plasma chemistry and its conditions were monitored in real time during the deposition process.
The purpose of this study was to correlate the optically measured fi lm stress with the stoichiometry of the deposited fi lmand plasma chemistry. Nitrogen-rich plasma processes tend to have higher tensile stress, and FT-IR measurements are inaccordance with the measured mechanical stresses of the wafers.
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참고문헌 (9)
참고문헌 신청
K. Park / 2014 / 14th Non-Volatile Memory Technology Symposium
K. Goda / 2015 / 18th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducer) :1937
S.G. Malhotra / 1997 / Thin Solid Films 301:45
D. Owen / 2013 / SPIE Proceedings, Metrology, Inspection, and Process Control for Microlithography XXVII 8681:86812T
M.P. Hughey / 2004 / Thin Solid Films 460:7
K. Goda / 2015 / 18th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducer) :1937
S.G. Malhotra / 1997 / Thin Solid Films 301:45
D. Owen / 2013 / SPIE Proceedings, Metrology, Inspection, and Process Control for Microlithography XXVII 8681:86812T
M.P. Hughey / 2004 / Thin Solid Films 460:7
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