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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2024.3
- 수록면
- 111 - 121 (11page)
- DOI
- https://doi.org/10.1007/s13391-023-00438-z
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초록· 키워드
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Zinc oxide (ZnO) thin fi lms with diff erent concentrations of lithium, from 0 to 15 mol%, have been grown on Si(100) substratesby employing aerosol-assisted chemical vapor deposition (AACVD). The structural, electronic, and magnetic propertiesof the ZnO thin fi lms were investigated as the eff ect of Li doping concentration. SEM images of surface morphologyreveal that the undoped and low-concentration Li-doped ZnO thin fi lms exhibit irregular ellipsoid grains. In comparison,the ZnO thin fi lms with higher Li concentration consist of multi-aligned rod-like and hexagonal-shaped grains. XRD patternanalysis confi rms that all grown ZnO thin fi lms exhibit a single polycrystalline phase of hexagonal wurtzite crystal. Thelattice reduction was observed in the Li-doped thin fi lms indicating that the substitutional Li eff ectively occupied the Znlattice site. The Hall eff ect measurement demonstrates that Li-doped ZnO fi lms possess p -type conductivity. The resistivityof Li-doped ZnO thin fi lms decreases with an increase in Li doping concentration while the hole carrier density increases.
The Hall mobility tends to increase as more Li doping concentration is given, with the highest Hall mobility obtained from15 mol% Li-doped fi lm with a value of 85.88 cm 2 /V s. The VSM study demonstrates that all grown ZnO thin fi lms exhibitan M-H hysteresis curve, indicating d 0 ferromagnetism behavior at room temperature, with coercivity ranging from 202 to373 Oe. The highest saturation magnetization was obtained from 10 mol% Li-doped fi lms, with a value of 5.55 × 10 –2 emu/g.
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