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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2023.5
- 수록면
- 298 - 308 (11page)
- DOI
- https://doi.org/10.1007/s13391-022-00399-9
이용수
이 논문의 연구 히스토리 (2)
2023
Effects of substrate bias and Ar pressure on growth of α-phase in W thin films deposited by RF magnetron sputtering
안선미
,
장길수
,
김두윤
외 1명
Electronic Materials Letters
2023.05
학술저널
Effects of pressure and substrate bias on the film deposition by DC and RF magnetron sputtering considering charged flux
안선미
재료공학부
2023.01
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초록· 키워드
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It is commonly observed that tungsten (W) thin fi lms deposited by sputtering at room temperature have a metastable β-phasewith relatively high resistivity and transform into a stable α-phase with relatively low resistivity under certain conditions.
In this study, to obtain W fi lms with low resistivity suitable for interconnect materials for semiconductors, we tried toidentify deposition parameters for the formation of α-phase W by varying the substrate bias and argon (Ar) pressure in aradio-frequency (RF) magnetron sputtering system. In the initial stage for 1 s of deposition under 20 mTorr and a substratebias of − 100 V, β-phase W nanoparticles were observed using transmission electron microscopy (TEM). However, as thedeposition time increased to 10 min under the same pressure and bias condition, the W fi lm became a mixture of α- andβ-phases. The fraction of α-phase W increased further as the negative bias increased from − 100 to − 200 V. In addition, thefi lm density increased and the surface roughness decreased as the bias changed from + 100 to − 100 V. These results indicatethat the negative bias triggered the phase transformation of W from β to α. The bias eff ect on the formation of α-phase Wand fi lm resistivity became more pronounced as pressure increased.
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