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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.1
- 수록면
- 297 - 302 (6page)
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초록· 키워드
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Ferroelectric polymer blend fi lm with non-polar relaxor polymer shows composition dependency of switching behaviors. Studies of ferroelectric properties in polymer blend fi lms with increase volume fraction of relaxor polymer revealed inverselydecrease both remnant polarization and coercive voltage, simultaneously. The reduced coercive voltage of the blend withfi lms with higher volume fraction of realxor polymer relative to that of pure ferroelectric fi lm is consistent with the highfrequency of applied voltage. Nanoscale ferroelectric polarization switching of blend fi lm was also faster than that of pureferroelectric fi lm.
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참고문헌 (20)
참고문헌 신청
Kusuma, D. Y. / 2012 / Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers / Adv. Mater 24:4163~4169
Shin, E. -Y. / 2018 / A highk fluorinated P(VDF–TrFE)-g-PMMA gate dielectric for highperformance fl exible fi eld-effect transistors / Adv. Func. Mater 28:1704780
Hwang, S. K. / 2012 / Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation / Adv. Mater 24:5910~5914
Naber, R. C. G. / 2005 / Highper formance solution-processed polymer ferroelectric field-effect transistors / Nat. Mater 4:243
Lee, H. J. / 2014 / Topography engineering of ferroelectric crystalline copolymer film / Org. Electron 15:751~757
Shin, E. -Y. / 2018 / A highk fluorinated P(VDF–TrFE)-g-PMMA gate dielectric for highperformance fl exible fi eld-effect transistors / Adv. Func. Mater 28:1704780
Hwang, S. K. / 2012 / Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation / Adv. Mater 24:5910~5914
Naber, R. C. G. / 2005 / Highper formance solution-processed polymer ferroelectric field-effect transistors / Nat. Mater 4:243
Lee, H. J. / 2014 / Topography engineering of ferroelectric crystalline copolymer film / Org. Electron 15:751~757
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