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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2024.3
- 수록면
- 165 - 172 (8page)
- DOI
- https://doi.org/10.1007/s13391-023-00437-0
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초록· 키워드
오류제보하기
Next-generation and solution-processed thin-fi lm solar cells have been attracted considerable attention because of theirlow cost, light weight, fl exibility, and aesthetics. However, most of solution-processed thin-fi lm solar cells are now focusedon the use of photovoltaic absorbers containing the toxic element of Pb. In this study, eco-friendly silver-bismuth-iodide(Ag-Bi-I) thin-fi lm photovoltaic devices with high open-circuit voltages ( V OC ) are developed by utilizing polythieno[3,4- b ]-thiophene-co-benzodithiophene (PTB7) as the hole transport layer (HTL). The solution-processed AgBi 2 I 7 semiconductor,which is an Ag-Bi-I ternary compound, exhibit features suitable for photovoltaic layers in thin-fi lm solar cells, including athree-dimensional (3D) crystal structure, good surface morphology, and low optical bandgaps of 1.87 eV. Meanwhile, thesolution-processed AgBi 2 I 7 thin-fi lm solar cell based on the PTB7 HTL exhibit a power conversion effi ciency of 0.94% withan improved V OC value of 0.71 V owing to the deeper highest occupied molecular orbital (HOMO) energy level comparedto that of poly(3-hexylthiophene-2,5-diyl) (P3HT). In other words, the V OC of the PTB7 HTL-based device is 20% higherthan that of the P3HT HTL-based control device. Our results provide a new approach for increasing the V OC of eco-friendlyAg-Bi-I thin-fi lm photovoltaics and indicate that further HTL engineering is necessary to simultaneously improve the V OCand performance of the devices.
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