Study on the Variation of Surface Morphology and Residual Stress Under Various Thermal Annealing Conditions with Bulk GaN Substrates Grown by HVPE

Hee Ae Lee; 박재화; Joo Hyung Lee; Seung Hoon Lee; 강효상; Seong Kuk Lee; Won Il Park; Sung Chul Yi

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자료유형: 학술저널

저자정보: Hee Ae Lee (Hanyang University) 박재화 (AMES Micron Co. LTD) Joo Hyung Lee (Hanyang University) Seung Hoon Lee (Hanyang University) 강효상 (AMES Micron Co. LTD) Seong Kuk Lee (AMES Micron Co. LTD) Won Il Park (Hanyang University) Sung Chul Yi (Hanyang University)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.17 No.1

발행연도: 2021.1

수록면: 43 - 53 (11page)

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We investigated the effects of different thermal treatment conditions on the surface and internal residual strains of bulk GaN grownby hydride vapor phase epitaxy (HVPE). Thermal annealing was performed at 700–1000 °C for 1–5 h in nitrogen atmosphere. TheGaN was characterized by atomic force microscopy, energy dispersive spectrometry, X-ray photoelectron spectroscopy, Ramanspectroscopy, and by high-resolution X-ray diffractometer. The experimental results demonstrated that thermal decompositionand oxidation occurred on the surface of GaN when exposed to heat over a long time, or even at a low temperature, as comparedto thermal decomposition of GaN in ambient nitrogen. The internal residual stress of GaN was relaxed most effectively whenannealing at 900 °C for 3 h, and it was confirmed that the crystal quality is best under this condition. We also confirmed that theeffect of annealing was extremely beneficial because native oxide impurities were removed most effectively in this condition. However, Ga metal or oxide could formed due to the occurrence of slight thermal decomposition on the surface.

#Hydride vapor phase epitaxy · Gallium nitride · Annealing · Residual thermal stress · III-nitride compound

참고문헌 (31)

참고문헌 신청

Iwan Susanto / 2017 / Temperature effects for GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy / Journal of Alloys and Compounds 723:21~29

A Bchetnia / 2008 / GaN thermal decomposition in N2AP-MOCVD environment / Semiconductor Science and Technology 23(12):125025

Freitas Jr., J.A. / 2010 / Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers / Journal of Physics D: Applied Physics 43(7):073001

H. Lei / 2002 / Raman and cathodoluminescence study of dislocations in GaN / Journal of Applied Physics 92(11):6666~6670

R. Dwiliński / 2010 / Recent achievements in AMMONO-bulk method / Journal of Crystal Growth 312(18):2499~2502

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