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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제8권 제6호
- 발행연도
- 2007.1
- 수록면
- 229 - 233 (5page)
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In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity) of HfO2 thin films in the CH4/Ar inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the HfO2 etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for CH4 (20 %)/Ar (80 %) gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CH4- containing plasmas.
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참고문헌 (20)
참고문헌 신청
/ 1996 / Thermodynamic stability of binary oxides in contact With silicon 11 : 2757 ~
/ 1997 / “Charge trapping and degradation in highpermittivityTiO2 dielectric films” 18 : 465 ~
/ 1998 / “CRC Handbook of Chemistry and Physics” : 4 ~
/ 1998 / “Circuit Requirement and Integration Challenges of Thin Gate Dielectrics for Ultra Small MOSFETs” : 747 ~
/ 1998 / “Transistorcharacteristics with Ta2O5 gate dielectric” 19 : 441 ~
/ 1997 / “Charge trapping and degradation in highpermittivityTiO2 dielectric films” 18 : 465 ~
/ 1998 / “CRC Handbook of Chemistry and Physics” : 4 ~
/ 1998 / “Circuit Requirement and Integration Challenges of Thin Gate Dielectrics for Ultra Small MOSFETs” : 747 ~
/ 1998 / “Transistorcharacteristics with Ta2O5 gate dielectric” 19 : 441 ~
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