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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제15권 제1호
- 발행연도
- 2014.1
- 수록면
- 49 - 54 (6page)
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In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si toSiO2 in SF6/O2 plasma. The etch rate of the Si film was decreased on adding O2 gas, and the selectivity of Si to SiO2 wasincreased, on adding O2 gas to the SF6 plasma. The optical condition of the Si film with this work was 1,350 nm/min, ata gas mixing ratio of SF6/O2 (=130:30 sccm). At the same time, the etch rate was measured as functions of the variousetching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bondsby ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Fieldemission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption ofthe reaction products.
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