Simulation by heat transfer of ADS process for large sized polycrystalline  silicon ingot growth

서중원; 문상진; 황정훈; 김윤제; 소원욱; 윤대호

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자료유형: 학술저널

저자정보: 서중원 문상진 황정훈 김윤제 소원욱 윤대호

저널정보: 한국결정성장학회 한국결정성장학회지 한국결정성장학회지 제18권 제1호

발행연도: 2008.1

수록면: 45 - 49 (5page)

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The development of manufacturing process of silicon (Si) ingots is one of the important issues to the growth of the photovoltaic industry. Polycrystalline Si wafers shares more than 60 % of the photovoltaic market due to its cost advantage compared to monocrystalline silicon wafers. Several solidification processes have been developed by industry including casting, heat exchange method (HEM) and electromagnetic casting. In this paper, the advanced directional solidification (ADS) method is used to growth of large sized polycrystalline Si ingot. This method has the advantages of the small heat loss, short cycle time and efficient directional solidification. The numerical simulation of the process is applied using a fluid dynamics model to simulate the temperature distribution. The results of simulations are confirmed efficient directional solidification to the growth of large sized polycrystalline Si ingot above 240 kg.

#Photovoltaic #Advanced directional solidification #Large sized polycrystalline Si ingot #Numerical simulation

참고문헌 (9)

참고문헌 신청

C. Khattak / 1991 / Directional solidification of 80 kg multicrystalline silicon ingots by HEM / Photovoltaic Specialists Conference, 22nd IEEE : 976 ~

C.H. Haβler / 2001 / Multicrystalline silicon for solar cells: process development by numerical simulation / Adv. Mater 13 : 1815 ~

D. Franke / 2002 / Silicon ingot casting: process development by numerical simulations / Solar Energy Materials & Solar Cells 72 : 83 ~

D. Vizman / 2003 / Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si czochralski melts under the influence of different

F. Ferrazza / 2002 / Large size multicrystalline silicon ingots / Solar Energy Materials & Solar Cells 72 : 77 ~

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