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논문 기본 정보

자료유형
학술저널
저자정보
Jieun Yu (Pusan National University) Myeonghwan Choi (Pusan National University) Dong-Yurl Yu (Korea Institute of Industrial Technology) Won Sik Hong (Korea Electronics Technology Institute) Cheolho Park (Chosun University) 강남현 (부산대학교)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.19 No.3
발행연도
2023.5
수록면
229 - 238 (10page)
DOI
https://doi.org/10.1007/s13391-022-00405-0

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초록· 키워드

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The predicted growth behavior of intermetallic compound (IMC) induced by electromigration of a Cu/organic solderabilitypreservative (OSP)/Sn-2.5Ag solder/electroless nickel electroless palladium immersion gold (ENEPIG)/Cu joint was calculatedfor a current density of 14 kA/cm 2 and current application time of 600 h and validated experimentally. Under as-refl owconditions, thin Cu 3 Sn and scallop-shaped Cu 6 Sn 5 layers were produced near the OSP interface, and a (Cu, Ni) 6 Sn 5 layer wasformed near the ENEPIG interface. Cu 6 Sn 5 islands and Ag 3 Sn with a β-Sn matrix were formed in the solder. The mobilitiesof Cu, Ni, and Sn atoms at the OSP and ENEPIG interfaces were calculated, and a relationship was found between IMCthickness and current application time. Under electron fl ow from the OSP to ENEPIG interface, the predicted total thickness(26.6 μm) of the IMCs (Cu 3 Sn, Cu 6 Sn 5 , and (Cu, Ni) 6 Sn 5 ), was in agreement with the experimental value (24.7 μm). With electron fl ow reversed, the predicted IMC thickness (14.2 μm) was similar to the experimental value (13.2 μm). Theapplication of current during electromigration only coarsened Cu 6 Sn 5 , regardless of the direction of electron fl ow. Finally,the Ni plating layer on the ENEPIG surface fi nish prevented the diff usion of Cu and suppressed electromigratory IMC growthby approximately 50%.

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