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논문 기본 정보

자료유형
학술저널
저자정보
D. Manasawi (Koneru Lakshmaiah Education Foundation (Deemed to Be University)) K. Srinivasa Rao (Koneru Lakshmaiah Educational Foundation (Deemed to be University))
저널정보
한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제24권 제1호
발행연도
2023.2
수록면
65 - 72 (8page)
DOI
https://doi.org/10.1007/s42341-022-00419-3

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In this work, we have proposed a charge plasma-based doping less double gated tunnel FET (DLDGTFET) based biosensor with improved ON current, I on /I off , and V Th . These biomolecules are immobilized in the cavity region to induce drain current. The sensing of the biomolecules is based on the drain current of the device while the drain current is based on the dielectric constant and the interfacing charges of the biomolecules. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. Several device performance parameters are compared with the existing CP JLTFET. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. This increased the ON state performance of device i.e. ON drive current, potential and electric field. The increase in tunneling of electrons is mainly due to high recombination of carriers in the channel region. The proposed CP JLTFET has shown improved I on (3.14 x 10 -7 A), reduced OFF current (6.45 x 10 -18 A), increased I on /I off (4.87 x 10 10). These excellent performance parameters of the proposed device can be used for sensing application of biomolecules by introducing a cavity in the device.

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