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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제4호
- 발행연도
- 2021.8
- 수록면
- 502 - 508 (7page)
- DOI
- https://doi.org/10.1007/s42341-020-00257-1
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초록· 키워드
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A novel core-source gate-all-around TFET based on InGaAs/InP heterojunction is presented in this paper. In the proposed device, the main current flow mechanism is line tunneling which occurs across a heterojunction composed of a narrowbandgap material of source and a wide-bandgap material of channel. The off-state current and ambipolar conduction are diminished by simultaneously employing two different doping concentrations in the channel region, as well as a wide-bandgap material in drain region. We study the switching performance of the device using a calibrated numerical device simulator. The results indicate impressive performance of the proposed transistor, including an extremely steep subthreshold swing, sub 3mv/dec over 5 decades and sub 60mv/dec over 9 decades of drain current, and average subthreshold swing of about 27mv/dec, and an on-state to off-state current ratio of about 10 11 at V GS = 0.3 V. The impact of variations in the device dimensions, doping and bias condition on its electrical characteristics is also studied and discussed physically.
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참고문헌 (13)
참고문헌 신청
Junil Lee / 2019 / Fabrication Methods for Nanowire Tunnel FET with Locally Concentrated Silicon-germanium Channel / JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 19(1):18~23
S. Glass / 2018 / SiGe based line tunneling fi eld-eff ect transistors / Compos. nanoélectroniques 18(1):1~10
S. Blaeser / 2015 / Novel SiGe/Si line tunneling TFET with high I on at low V DD and constant SS / IEEE Int. Electron. Devices. Meeting. IEDM 9(2):608~611
Amey M. Walke / 2014 / Fabrication and analysis of a Si/Si0.55Ge0.45heterojunction line tunnel FET / IEEE Transactions on Electron Devices 61(3):707~715
Pao-Chuan Shih / 2017 / A U-Gate InGaAs/GaAsSb Heterojunction TFET of Tunneling Normal to the Gate With Separate Control Over ON- and OFF-State Current / IEEE Electron Device Letters 38(12):1751~1754
S. Glass / 2018 / SiGe based line tunneling fi eld-eff ect transistors / Compos. nanoélectroniques 18(1):1~10
S. Blaeser / 2015 / Novel SiGe/Si line tunneling TFET with high I on at low V DD and constant SS / IEEE Int. Electron. Devices. Meeting. IEDM 9(2):608~611
Amey M. Walke / 2014 / Fabrication and analysis of a Si/Si0.55Ge0.45heterojunction line tunnel FET / IEEE Transactions on Electron Devices 61(3):707~715
Pao-Chuan Shih / 2017 / A U-Gate InGaAs/GaAsSb Heterojunction TFET of Tunneling Normal to the Gate With Separate Control Over ON- and OFF-State Current / IEEE Electron Device Letters 38(12):1751~1754
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