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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제3호
- 발행연도
- 2021.1
- 수록면
- 282 - 289 (8page)
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This work utilizes the dielectric modulated detection technique within a junctionless tunnel fi eld-effect transistor (JLTFET) to detect various charged and neutral biomolecules. The electrostatic properties of the proposed dielectric modulated junctionless double gate JLTFET (DM-JL DGTFET) are observed and analyzed to determine the biomolecules like uricase(k = 1.54), Glucose oxidase (k = 3.46), APTES (k = 3.57), keratin (k = 8) and gelatin (k = 14) lipid, carbohydrate, nucleic acid (DNA and RNA), and protein, etc. The SiO 2 (gate oxide) is etched and a cavity is shaped under the gate electrode in which the analytes are injected and thus the eff ective dielectric of the gate oxide is modulated. The injected charge or neutral analytes of the various biomolecules in the immobilized states are responsible to change the electrostatic characteristics of the DM-JL DGTFET device by varying the gate capacitance. The drain current, I ON /I OFF , subthreshold slope, and sensitivity of the DM-JL DGTFET are estimated to recognize the biomolecules. The DM-DGJLTFET shows noticeable sensitivity outcomes 15.2 × 10 11 for the charged biomolecules, especially the positively charged analytes.
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참고문헌 (29)
참고문헌 신청
K. K. Young / 1989 / Short-channel eff ect in fully-depleted SOI MOSFETs / IEEE Trans. Electron Devices 36(2):399~402
A. Chaudhary / 2004 / Controlling short-channel eff ects in deep-submicron SOI MOSFETs for improved reliability : a review / IEEE Transactions on Device and Material Reliability 4(1):2004
M. J. Kumar / 2004 / Two-dimensional analytical modeling of fully depleted dual-material gate(DMG)SOI MOSFET and evidence for diminished short-channel eff ects / IEEE Trans. Electron Devices 15(4):569~574
T. Poiroux / 2005 / Multiple gate devices : advantages and challenges / Microelectron. Eng 80:378~385
K. Boucart / 2007 / Double-gate tunnel FET with high-k gate dielectric / IEEE Trans. Electron Devices 54(7):1725~1733
A. Chaudhary / 2004 / Controlling short-channel eff ects in deep-submicron SOI MOSFETs for improved reliability : a review / IEEE Transactions on Device and Material Reliability 4(1):2004
M. J. Kumar / 2004 / Two-dimensional analytical modeling of fully depleted dual-material gate(DMG)SOI MOSFET and evidence for diminished short-channel eff ects / IEEE Trans. Electron Devices 15(4):569~574
T. Poiroux / 2005 / Multiple gate devices : advantages and challenges / Microelectron. Eng 80:378~385
K. Boucart / 2007 / Double-gate tunnel FET with high-k gate dielectric / IEEE Trans. Electron Devices 54(7):1725~1733
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