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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.18 No.3
- 발행연도
- 2018.6
- 수록면
- 360 - 366 (7page)
- DOI
- 10.5573/JSTS.2018.18.3.360
이용수
초록· 키워드
오류제보하기
A novel tunneling field effect transistor (TFET) with a recess channel is proposed. Proposed TFET has a thin intrinsic region and it is formed in the shape of surrounding the gate. The performance of the proposed device is analyzed through comparison with double gate thin intrinsic TFET (DGTI) TFET and double gate (DG) TFET structures. The comparison results of on-current (I<SUB>on</SUB><SUB></SUB>) and subthreshold swing (S) with other devices shows that the proposed device has excellent characteristics. The effects of the structural parameters change of the device on the proposed device are analyzed and compared with the other two TFET structures. A guideline for the optimization of the proposed device is suggested.
목차
Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (23)
참고문헌 신청
International Technology Roadmap for Semiconductors. Process Integration, Devices, and Structures, http://www.itrs2.net
T. Uemura and T. Baba, “First demonstration of a planar- type surface tunnel transistor (S-I-T): lateral inter band tunnel device”, Solid-State Electronics, Vol. 40, No. 1-8. pp. 519-522, 1996.
W. Y. Choi and W. Lee, “Hetero-Gate-Dielectric Tunneling Field-Effect Transistors”, IEEE Trans. Electron Devices, Vol. 57, No. 9, pp. 2317-2319 Sep. 2010.
K. Boucart and A. M. Ionescu, “Double-Gate Tunnel FET With High-κ Gate Dielectric”, IEEE Trans. Electron Devices, Vol. 54, No. 7, pp. 1725- 1733, Jul. 2007.
A. S. Verhulst, W. G. Vandenberghe, K. Maex and G.Groeseneken, “Boosting the on-current of a nchannel nanowire tunnel field-effect transistor by source material optimization”, J. Appl. Phys, Vol. 104, p. 064514, Jul. 2008.
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