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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.11
- 수록면
- 479 - 484 (6page)
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초록· 키워드
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ß-Ga 2 O 3 /4H-SiC heterojunction diodes were fabricated by depositing β-Ga 2 O 3 thin fi lms on 4H-SiC substrates using radiofrequency sputtering. X-ray diff raction (XRD) analysis revealed increased refl ectivity of β-Ga 2 O 3 ( 4 02), ( 2 02) and ( 6 03)crystal planes with optimized sputtering power. Scanning electron microscopy (SEM) and atomic force microscopy (AFM)were performed to confi rm grain size and distribution. The Hall mobility (30.16 cm 2 /V ? s) and carrier concentration (3.14× 101 4 cm? 3) showed with large and homogeneous grain distribution thin fi lms. For these thin fi lms, mobility and carrierconcentration value could improve up to 9% and 55%. The eff ect of these electrical characteristics was ascribed to reductionof the grain boundary scattering. The I?V characteristics along with Hall measurement of the heterojunction diode suggestthat the improvement in the threshold voltage and current density is caused by a substantial enhancement in charge carriermobility.
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참고문헌 (34)
참고문헌 신청
Yang, J. / 2017 / High Breakdown Voltage(-201)β-Ga2O3 Schottky Rectifi ers / IEEE Electron Device Lett 38(7):906~909
Jayawardena, G. / 2018 / Electronic characterization of technologically relevant interfaces on beta Gallium Oxide and 4H-SiC wide bandgap semiconductors
Oh, S. / 2016 / Electrical characteristics of vertical Ni/βGa2O3 Schottky barrier diodes at high temperatures / ECS Journal of Solid State Science and Technology 6(2):Q3022
Kumar, S. S. / 2013 / Structure, morphology and optical properties of amorphous and nanocrystalline gallium oxide thin fi lms / The Journal of Physical Chemistry C 117(8):4194~4200
Lee, Y. J. / 2020 / Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC nn Heterojunction Diodes / Materials 13(2):434
Jayawardena, G. / 2018 / Electronic characterization of technologically relevant interfaces on beta Gallium Oxide and 4H-SiC wide bandgap semiconductors
Oh, S. / 2016 / Electrical characteristics of vertical Ni/βGa2O3 Schottky barrier diodes at high temperatures / ECS Journal of Solid State Science and Technology 6(2):Q3022
Kumar, S. S. / 2013 / Structure, morphology and optical properties of amorphous and nanocrystalline gallium oxide thin fi lms / The Journal of Physical Chemistry C 117(8):4194~4200
Lee, Y. J. / 2020 / Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC nn Heterojunction Diodes / Materials 13(2):434
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