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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.1
- 수록면
- 623 - 629 (7page)
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초록· 키워드
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For low-cost and lightweight polymer/plastic substrates in flexible building-integrated photovoltaic (BIPV) modules, lowtemperatureprocessing is essential. Amorphous silicon (a-Si:H) requires processing at a temperature of 200–250 °C byplasma-enhanced chemical vapor deposition to obtain satisfactory optoelectronic properties, which limits such substratesin terms of thermal budget. This study is focused on the fabrication of p–i–n-type a-Si:H solar cells at relatively low temperatures(100 °C). Intrinsic a-Si:H films with large optical gaps (1.83 eV) were prepared at 100 °C using a high hydrogendilution ratio. In addition, p-type amorphous silicon oxide and n-type microcrystalline silicon oxide films with large opticalgaps and suitable conductivities were prepared at 100 °C using a gas mixture containing the dopant B2H6or PH3and CO2. Finally, an a-Si:H p–i–n cell was fabricated at 100 °C; it exhibited an excellent power conversion efficiency of 9.0%, whichwas higher than those reported for a-Si:H thin film photovoltaics prepared at 100 °C. We believe that this study will openpromising routes for the development of high-performance and flexible BIPVs.
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