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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2020.3
- 수록면
- 6 - 11 (6page)
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The power conversion efficiency (PCE) of a two-terminal tandem solar cell depends upon the tunnel-recombination junction (TRJ) between the top and bottom sub-cells. An optimized TRJ in a tandem cell helps improve its open-circuit voltage (V<SUB>oc</SUB>), short-circuit current density (J<SUB>sc</SUB>), fill factor (FF), and efficiency (PCE). One of the parameters that affect the TRJ is the buffer layer thickness. Therefore, we investigated various TRJs by varying the thickness of the buffer or intermediate layer (TRJ-buffer) in between the highly doped p-type and n-type layers of the TRJ. The TRJ-buffer layer was p-type nc-Si:H, with a doping of 0.06%, an activation energy (E<SUB>a</SUB>) of 43 meV, an optical gap (E<SUB>g</SUB>) of 2.04 eV, and its thickness was varied from 0 nm to 125 nm. The tandem solar cells we investigated were a combination of a heterojunction with intrinsic thin layer (HIT) bottom sub-cell and an a-Si:H (amorphous silicon) top sub-cell. The initial cell efficiency without the TRJ buffer was 7.65% while with an optimized buffer layer, its efficiency improved to 11.74%, i.e., an improvement in efficiency by a factor of 1.53.
목차
ABSTRACT
1. Introduction
2. Experimental Details
3. Results and Discussion
4. Conclusions
References
참고문헌 (19)
참고문헌 신청
Willemen, J. A. / 1994 / Computer modeling of amorphous silicon tandem cells / Proceedings of the 24th IEEE Photovoltaic Specialists Conference :599~602
Hegedus, S. S. / 1995 / Current transport in amorphous silicon np junctions and their application as tunnel junctions in tandem solar cells / Appl. Phys. Lett. 67(6):813
Rath, J. K. / 1998 / Microcrystalline n-and p-layers at the tunnel junction of a-Si : H/a-Si : H tandem cells / J. Non. Cryst. Solids 227-230(2):1282
Rath, J. K. / 2000 / Effect of oxide treatment at the microcrystalline tunnel junction of a-Si : H/a-Si : H tandem cells / J. Non. Cryst. Solids 266-269(B):1129~1133
Rubinelli, F. A. / 2001 / Microcrystalline n-i-p tunnel junction in a-Si : H/a-Si : H tandem cells / J. Appl. Phys 89:4010~4018
Hegedus, S. S. / 1995 / Current transport in amorphous silicon np junctions and their application as tunnel junctions in tandem solar cells / Appl. Phys. Lett. 67(6):813
Rath, J. K. / 1998 / Microcrystalline n-and p-layers at the tunnel junction of a-Si : H/a-Si : H tandem cells / J. Non. Cryst. Solids 227-230(2):1282
Rath, J. K. / 2000 / Effect of oxide treatment at the microcrystalline tunnel junction of a-Si : H/a-Si : H tandem cells / J. Non. Cryst. Solids 266-269(B):1129~1133
Rubinelli, F. A. / 2001 / Microcrystalline n-i-p tunnel junction in a-Si : H/a-Si : H tandem cells / J. Appl. Phys 89:4010~4018
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UCI(KEPA) : I410-ECN-0101-2020-530-000465117