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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.11 No.4
- 발행연도
- 2016.7
- 수록면
- 939 - 942 (4page)
이용수
초록· 키워드
오류제보하기
One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (Nd) of the active layer on the J-V curve. When the active layer thickness was varied (for N<SUB>d</SUB> = 8×10<SUP>17</SUP> cm<SUP>-3</SUP>) from 800 nm to 100 nm, the reverse saturation current density (J<SUB>o</SUB>) changed from 3.56×10<SUP>-5 </SUP>A/cm2 to 9.62×10<SUP>-11</SUP> A/cm<SUP>2</SUP> and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N<SUB>d</SUB> = 4×10<SUP>15</SUP> cm<SUP>-3</SUP>), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J<SUB>o</SUB> = 9.62×10<SUP>-11</SUP> A/cm<SUP>2</SUP>) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.
목차
Abstract
1. Introduction
2. Theoretical
3. Results and Discussion
4. Conclusion
References
참고문헌 (17)
참고문헌 신청
[학술지(정기간행물)] - J. C. H. Phang / 1984 / Accurate analytical method for the extraction of solar cell model parameters / Electron Lett 20 : 406 ~ 408
[학술지(정기간행물)] - D. S. H. Chan / 1986 / A comparative study of extraction methods for solar cell model parameters / Solid-State Electron 29 : 329 ~ 337
[학술지(정기간행물)] - S. Voswinckel / 2013 / Behaviour of amorphous silicon solar modules : A parameter study / Sol. Energy 92 : 206 ~ 213
[학술지(정기간행물)] - K. I. Kurobe / 2005 / New two-diode model for detailed analysis of multicrystalline silicon solar cells / Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap 44 : 8314 ~ 8321
[학술지(정기간행물)] - C. Voz / 2013 / Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells : Relation to the charge carrier collection efficiency / Org. Electron. : phys. mater. appl 14 : 1643 ~ 1648
[학술지(정기간행물)] - D. S. H. Chan / 1986 / A comparative study of extraction methods for solar cell model parameters / Solid-State Electron 29 : 329 ~ 337
[학술지(정기간행물)] - S. Voswinckel / 2013 / Behaviour of amorphous silicon solar modules : A parameter study / Sol. Energy 92 : 206 ~ 213
[학술지(정기간행물)] - K. I. Kurobe / 2005 / New two-diode model for detailed analysis of multicrystalline silicon solar cells / Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap 44 : 8314 ~ 8321
[학술지(정기간행물)] - C. Voz / 2013 / Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells : Relation to the charge carrier collection efficiency / Org. Electron. : phys. mater. appl 14 : 1643 ~ 1648
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