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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2017.12
- 수록면
- 113 - 121 (9page)
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초록· 키워드
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The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.
목차
ABSTRACT
1. Introduction
2. Current status of developing of p-type layer (silicon oxide) for thin film silicon solar cells
3. Current status of developing of i-type layer (silicon oxide) for thin film silicon solar cells
4. Current status of developing of n-type layer (silicon oxide) for thin film silicon solar cells
5. Current status of high-efficiency thin film solar cell
6. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2018-530-001523000