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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제1호
- 발행연도
- 2021.1
- 수록면
- 103 - 107 (5page)
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Amorphous SiZnSnO (a-SZTO) thin film transistors (TFTs) have been reported with transparent Si?In?Zn?O/Ag/Si?In?Zn?O (SIZO OMO) source/drain (S/D) electrodes. The characteristics of ITO and SIZO OMO electrodes were compared with conventional metal electrode of Ti/Al. The SZTO TFT with SIZO OMO electrode showed high fi eld eff ect mobility of 17.69 cm 2 /Vs, threshold voltage of 4.05 V and low sub-threshold swing of 0.33 V/decade. The stability of a-SZTO TFTs with SIZO OMO electrode was measured ΔV TH = 1.4 V at 333 K, and ? 20 V for 7200 s under negative bias temperature stress (NBTS).
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