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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제5호
- 발행연도
- 2021.10
- 수록면
- 593 - 597 (5page)
- DOI
- https://doi.org/10.1007/s42341-021-00351-y
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초록· 키워드
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Transparent oxide?metal?oxide (OMO) of SiInZnO/Ag/SiInZnO (SAS) electrodes have been used for source and drain (S/D) electrodes to process transparent thin film transistors (TFTs) with high performance. Amorphous oxide semiconducting Si?In?Zn?O (SIZO) has been used as a fully transparent channel layer with OMO electrodes with different layer thickness. Layer thickness dependency of the electrical performance of TFTs using SIZO containing 1 wt% Si (1SIZO) TFT has been investigated and analyzed. The electrical performance and the optical properties between different thickness OMO electrodes have been compared and optimized.
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