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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제1호
- 발행연도
- 2015.1
- 수록면
- 46 - 48 (3page)
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초록· 키워드
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Thin film transistor (TFT) with silicon indium zinc oxide (SIZO) was fabricated by solution process, and the effect ofannealling temperature on the electrical performance has been explored. The performance of SIZO TFT exhibitedsaturation mobility of 1.37 cm2 /Vs, a threshold voltage of -7.2 V, and an on-off ratio of 1.1 × 105.
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참고문헌 (16)
참고문헌 신청
Bhola N. Pal / 2009 / Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors / Nature Materials 8 (11) : 898 ~ 903
Byoung-Sang Kim / 2009 / Electron Transport Properties of Zn(phen)q Compared with Alq3 in OLED / Journal of Electrical Engineering & Technology 4 (3) : 418 ~ 422
Dongjo Kim / 2009 / Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors / Applied Physics Letters 95 (10) : 103501 ~
Ibrahim Abdel-Motaleb / 2011 / Investigation of the drain current shift in ZnO thin film transistors / Journal of Applied Physics 109 (1) : 014503 ~
J. J. Chen / 2005 / Room-temperature ferromagnetic Co-doped ZnO nanoneedle array prepared by pulsed laser deposition / Applied Physics Letters 87 (17) : 173119 ~
Byoung-Sang Kim / 2009 / Electron Transport Properties of Zn(phen)q Compared with Alq3 in OLED / Journal of Electrical Engineering & Technology 4 (3) : 418 ~ 422
Dongjo Kim / 2009 / Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors / Applied Physics Letters 95 (10) : 103501 ~
Ibrahim Abdel-Motaleb / 2011 / Investigation of the drain current shift in ZnO thin film transistors / Journal of Applied Physics 109 (1) : 014503 ~
J. J. Chen / 2005 / Room-temperature ferromagnetic Co-doped ZnO nanoneedle array prepared by pulsed laser deposition / Applied Physics Letters 87 (17) : 173119 ~
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