지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
이용수
초록· 키워드
오류제보하기
Since the original report on ferroelectricity in Si-doped HfO₂ in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.
목차
Abstract
1. 서론
2. 도메인 역학과 분극 반전 동역학
3. 결론
References
참고문헌 (47)
참고문헌 신청
Boscke T S, Muller J, Brauhaus D, Schroder U and Bottger U, Ferroelectricity in hafnium oxide thin films, Appl. Phys. Lett. 99 (2011) 102903.
Park M H, Lee Y H, Kim H J, Kim Y J, Moon T, Kim K D, Mueller J, Kersch A, Schroeder U and Mikolajick T, Ferroelectricity and antiferroelectricity of doped thin HfO2 ?based films, Adv. Mater. 27 (2015) 1811-31.
Park M H, Lee Y H, Mikolajick T, Schroeder U and Hwang C S, Review and perspective on ferroelectric HfO2-based thin films for memory applications, MRS Commun. 8 (2018) 795-808.
Mikolajick T, Slesazeck S, Park M H and Schroeder U, Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors, MRS Bull. 43 (2018) 340-6.
Lee H-J, Lee M, Lee K, Jo J, Yang H, Kim Y, Chae S C, Waghmare U and Lee J H, Scale-free ferroelectricity induced by flat phonon bands in HfO2, Science 369 (2020) 1343-7.
Park M H, Lee Y H, Kim H J, Kim Y J, Moon T, Kim K D, Mueller J, Kersch A, Schroeder U and Mikolajick T, Ferroelectricity and antiferroelectricity of doped thin HfO2 ?based films, Adv. Mater. 27 (2015) 1811-31.
Park M H, Lee Y H, Mikolajick T, Schroeder U and Hwang C S, Review and perspective on ferroelectric HfO2-based thin films for memory applications, MRS Commun. 8 (2018) 795-808.
Mikolajick T, Slesazeck S, Park M H and Schroeder U, Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors, MRS Bull. 43 (2018) 340-6.
Lee H-J, Lee M, Lee K, Jo J, Yang H, Kim Y, Chae S C, Waghmare U and Lee J H, Scale-free ferroelectricity induced by flat phonon bands in HfO2, Science 369 (2020) 1343-7.
함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
원자층증착법으로 증착된 강유전성 플루오라이트 구조 강유전체 박막의 불순물 효과
한국표면공학회지
2020 .08
-
High-Performance, Self-Powered Multimodal Sensors via Ferroelectric Polarization
한국고분자학회 학술대회 연구논문 초록집
2020 .10
-
On the switching dynamics of epitaxial ferroelectric CeO2–HfO2 thin film capacitors
Nano Convergence
2022 .12
-
강유전체 면적 조절이 가능한 Ferroelectric-Gate Fin Field-Effect Transistor
대한전자공학회 학술대회
2021 .06
-
Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics
Nano Convergence
2022 .11
-
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
Nano Convergence
2022 .10
-
Dielectric and Ferroelectric Properties of Nb Doped BNT-Based Relaxor Ferroelectrics
한국재료학회지
2015 .01
-
Effect of Bottom Electrode Doping on Metal- Ferroelectric-Insulator-Semiconductor (MFIS) Ferroelectric Tunnel Junction (FTJ)
대한전자공학회 학술대회
2021 .06
-
반도체 소자용 산화하프늄 기반 강유전체의 원자층 증착법 리뷰
한국표면공학회지
2022 .10
-
Metal-Ferroelectric-Metal Structure for FeFET: Empowering High Performance in Data Storage Technology
Transactions on Electrical and Electronic Materials
2024 .08
-
Switching Behaviors of Ferroelectric and Relaxor Polymer Blend Films
Electronic Materials Letters
2019 .01
-
Negative Capacitance 현상을 확인하기 위한 Metal-Ferroelectric-Insulator-Metal 소자 분석 연구
대한전자공학회 학술대회
2020 .08
-
고 유전물질을 절연체 박막으로 적용한 금속-강유전체-절연체-금속 구조의 강유전체 터널링 접합 특성 분석
전자공학회논문지
2022 .06
-
HfAlOx 기반 강유전성 터널 접합의 잔류 분극에 어닐링 온도가 주는 영향
대한전자공학회 학술대회
2022 .06
-
강유전체/비강유전체 복합 막의 유전특성 평가
대한전자공학회 학술대회
2018 .06
-
Gate last process Ferroelectric-Metal Field-Effect Transistor
대한전자공학회 학술대회
2022 .06
-
Improvement of leakage and ferroelectric properties of Mn-doped BiFeO3 thin films
Journal of Ceramic Processing Research
2017 .04
-
Significance of ferroelectric polarization in PVDF binder for high-rate Li-ion battery
한국고분자학회 학술대회 연구논문 초록집
2017 .04
-
Spherical Recess Channel을 가진 MFMIS 구조의 하프니아 기반 강유전체 전계효과 트랜지스터 소자 특성 개선
대한전자공학회 학술대회
2021 .06
-
강유전체를 이용한 음의 정전용량 무접합 이중 게이트 MOSFET의 문턱전압 모델
전기전자재료학회논문지
2023 .03
이 논문의 저자 정보
이 논문과 함께 이용한 논문
國際法上「國家犯罪」槪念의 危機 : UN국제법위원회 작업을 중심으로
金奭賢
국제법학회논총
2000
.12
Enhanced Ferroelectricity and Alleviated Depolarization in Ultra-thin Hf0.5Zr0.5O₂-based MFIS capacitor by Interface Engineering
Se Hyun Kim
,
Hyun Woo Jeong
,
Kun Yang
외 6명
한국표면공학회 학술발표회 초록집
2022
.11
HfAlOx 기반 강유전성 터널 접합의 잔류 분극에 어닐링 온도가 주는 영향
김지형
,
김다혜
,
이윤석
외 4명
대한전자공학회 학술대회
2022
.06
플루오라이트 구조 산화물 내의 강유전성 결정상의 생성 메커니즘 리뷰
유근택
,
박근형
,
이은빈
외 1명
새물리
2021
.11
원자층 증착법으로 증착한 HfAlO 박막의 패시베이션 특성 연구
박지혜
,
임종철
,
장효식
한국태양에너지학회 학술대회논문집
2022
.04
최근 본 자료
댓글(0)
0