Indium Tin Oxide(ITO) Thin Film Deposition on Polyethylene Terephthalate(PET) Using Ion Beam Assisted Deposition(IBAD)

Bae, J.W.; Kim, H.J.; Kim, J.S.; Lee, Y.H.; Lee, N.E.; Yeom, G.Y.

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자료유형: 학술대회자료

저자정보: Bae, J.W. (Dept. of Materials Engineering, Sungkyunkwan Univ.) Kim, H.J. (Dept. of Materials Engineering, Sungkyunkwan Univ.) Kim, J.S. (Dept. of Materials Engineering, Sungkyunkwan Univ.) Lee, Y.H. (Dept. of Materials Engineering, Sungkyunkwan Univ.) Lee, N.E. (Dept. of Materials Engineering, Sungkyunkwan Univ.) Yeom, G.Y. (Dept. of Materials Engineering, Sungkyunkwan Univ.)

저널정보: 한국정보디스플레이학회 한국정보디스플레이학회 학술대회 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집

발행연도: 2000.1

수록면: 81 - 83 (3page)

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Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

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