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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제2호
- 발행연도
- 2015.1
- 수록면
- 103 - 105 (3page)
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Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used tosuppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift towardthe positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As aresult, the carrier concentration was decreased with increasing Si content.
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참고문헌 (14)
참고문헌 신청
Byungki Ryu / 2010 / O-vacancy as the origin of negative bias illumination stress instability in amorphous In?Ga?Zn?O thin film transistors / Applied Physics Letters 97 (2)
D.-H. Lee / 2007 / A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors / Advanced Materials 19 (6) : 843 ~ 847
H. S. Lim / 2012 / / Electrochem. Solid-State Lett 15 : H78 ~
Himchan Oh / 2010 / Photon-accelerated negative bias instability involving subgap states creation in amorphous In?Ga?Zn?O thin film transistor / Applied Physics Letters 97 (
Ho Yong Chong / 2011 / Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution proce
D.-H. Lee / 2007 / A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors / Advanced Materials 19 (6) : 843 ~ 847
H. S. Lim / 2012 / / Electrochem. Solid-State Lett 15 : H78 ~
Himchan Oh / 2010 / Photon-accelerated negative bias instability involving subgap states creation in amorphous In?Ga?Zn?O thin film transistor / Applied Physics Letters 97 (
Ho Yong Chong / 2011 / Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution proce
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