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논문 기본 정보

자료유형
학술저널
저자정보
Haokun Li (Shanghai Jiao Tong University) Chongyang Li (Shanghai Jiao Tong University) Peixin Chen (Shanghai Jiao Tong University) Rui Xi (Shanghai Jiao Tong University) Feifei Li (Shanghai Jiao Tong University) Huiqin Ling (Shanghai Jiao Tong University) Ming Li (Shanghai Jiao Tong University)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.20 No.5
발행연도
2024.9
수록면
509 - 516 (8page)
DOI
https://doi.org/10.1007/s13391-024-00492-1

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초록· 키워드

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Single Ni layer is often inserted as diffusion barrier between Cu pillar and Sn-based solder to avoid excessive growth ofbrittle intermetallic compounds (IMCs) and consequent Kirkendall voids (KVs) in microbumps. However, with shrinkingsize of microbumps, Ni layer cannot maintain the inhibition performance as its thickness is reduced as well. In this work,Ni/Cu bi-layer barrier was employed at Cu-Sn interface, which was expected to reduce diffusion by rapidly generatedCu-Sn IMC retarding the diffusion of Ni. IMC growth behavior and interfacial reaction during isothermal aging wereinvestigated. The self-healing phenomenon of KVs was detected during aging at 150 °C . It’s attributed to the transformationfrom Cu 3 Sn to Cu 6 Sn 5 . The novel barrier exhibited excellent inhibition property compared with single Ni layer withslower IMC growth rate and less Cu substrate diffusion. Moreover, during 170 °C aging test, the Ni/Cu bi-layer barriershowed no sign of depletion until 600 h, while the single Ni barrier was completely depleted after 144 h. Such excellentinhibition property is benefi cial to the future application of ultra-thin barrier layer in microbumps.

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