지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제18권 제5호
- 발행연도
- 2017.10
- 수록면
- 250 - 252 (3page)
- DOI
- Https://doi.org/10.4313/TEEM.2017.18.5.250
이용수
초록· 키워드
오류제보하기
High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO)thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varyingthe thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nmas it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices werefabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the invertersexhibited high voltage gain values of 30.74 and 28.56, respectively at VDD = 15 V. It was confirmed that the voltage gain can beimproved by increasing the S.S value.
목차
등록된 정보가 없습니다.
참고문헌 (13)
참고문헌 신청
R. L. Hoffman / 2003 / ZnO-based transparent thin-film transistors / Applied Physics Letters 82(5):733~735
P. Barquinha / 2008 / The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs / Electrochemical and Solid-State Letters 11(9):H248
Kenji Nomura / 2004 / Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors / Nature 432(7016):488~492
Hisato Yabuta / 2006 / High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering / Applied Physics Letters 89(11):112123
J. Y. Choi / 2016 / Semicond. Sci. Technol. 31:125007
P. Barquinha / 2008 / The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs / Electrochemical and Solid-State Letters 11(9):H248
Kenji Nomura / 2004 / Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors / Nature 432(7016):488~492
Hisato Yabuta / 2006 / High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering / Applied Physics Letters 89(11):112123
J. Y. Choi / 2016 / Semicond. Sci. Technol. 31:125007
함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Realization of Inverter and Logic Circuit Using Amorphous Si?In?Zn?O Thin Film Transistor
Transactions on Electrical and Electronic Materials
2021 .10
-
Temperature Dependence of SiInZnO Thin Film Transistor Fabricated by Solution Process
Transactions on Electrical and Electronic Materials
2015 .01
-
Influence of Channel Thickness Variation on Temperature and Bias Induced Stress Instability of Amorphous SiInZnO Thin Film Transistors
Transactions on Electrical and Electronic Materials
2017 .02
-
Investigation of the Stability and the Transparency of Oxide Thin Film Transistor with bi-Layer Channels and Oxide/Metal/Oxide Multilayer Source/Drain Electrodes
Transactions on Electrical and Electronic Materials
2022 .04
-
Improve the electrical properties of amorphous oxide thin film transistor by using SiInZnO/SiZnSnO bi-layer channel structure
한국표면공학회 학술발표회 초록집
2020 .12
-
Layer Thickness Dependency of Oxide?Metal?Oxide Electrode on the Electrical Performance of Oxide Thin Film Transistors
Transactions on Electrical and Electronic Materials
2021 .10
-
Investigation on the Relaxation Time Response of Metal Capped Amorphous Oxide Si?In?Zn?O Thin Film Transistors
Transactions on Electrical and Electronic Materials
2021 .08
-
Transmission Line Method Analysis on the Electrical Properties of Bi-Layer Channel Oxide Thin Film Transistors with Oxide-Metal-Oxide Electrodes
Transactions on Electrical and Electronic Materials
2020 .01
-
Effect of RF Sputtering Power on the Electrical Properties of Si–In–Zn–O Thin Film Transistors
Transactions on Electrical and Electronic Materials
2019 .01
-
Indium-Zinc 산화물 박막 트랜지스터 기반의 N-MOS 인버터
전기전자재료학회논문지
2017 .07
-
Electrical Performance of Amorphous Oxide/Colloidal Quantum Dot/Amorphous Oxide Hybrid Thin Film Transistor
Transactions on Electrical and Electronic Materials
2022 .02
-
A Single-Stage High Gain Current Source Inverter for Grid-Connected Photovoltaic System
ICPE(ISPE)논문집
2015 .06
-
Fully Spray-printed Low-voltage, Flexible Thin-film Transistors and Inverters
한국고분자학회 학술대회 연구논문 초록집
2019 .04
-
강유전체를 이용한 음의 정전용량 무접합 이중 게이트 MOSFET의 문턱전압 모델
전기전자재료학회논문지
2023 .03
-
Low-Temperature-Processed SiInZnO Thin-Film Transistor Fabricated by Radio Frequency Magnetron Sputtering
Transactions on Electrical and Electronic Materials
2018 .06
-
Performance Analysis of the Three Transistor Voltage Source Inverter Using Different PWM Techniques
ICPE(ISPE)논문집
2015 .06
-
전자 수송층을 삽입한 용액 공정형 산화물 트랜지스터의 특성 평가
전기전자재료학회논문지
2017 .08
-
Electrical characteristics of Zinc Oxide thin film transistor fabricated at high temperature by RF magnetron sputtering technique
Journal of Ceramic Processing Research
2017 .11
-
Model Predictive Control Method to Reduce Common-Mode Voltage for Voltage Source Inverters
전력전자학회 학술대회 논문집
2015 .11
-
High voltage driving method by using cluster inverters for SRM
ICPE(ISPE)논문집
2015 .06
이 논문의 저자 정보
최근 본 자료
댓글(0)
0