Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective

Duyoung  Yang; Byungsoo  Kim; Tae  Hoon  Eom; Yongjo  Park; Ho  Won  Jang

doi:https://doi.org/10.1007/s13391-021-00333-5

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자료유형: 학술저널

저자정보: Duyoung Yang (Seoul National University) Byungsoo Kim (Seoul National University) Tae Hoon Eom (Seoul National University) Yongjo Park (Seoul National University) Ho Won Jang (Seoul National University)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.18 No.2

발행연도: 2022.3

수록면: 113 - 128 (16page)

DOI: https://doi.org/10.1007/s13391-021-00333-5

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The demand for high-effi cient and robust power semiconductors in harsh environments such as high temperature and highvoltage has been enlarged with the fast development of the industry. Gallium oxide (Ga 2 O 3 ) with a larger bandgap energy of4.8?5.3 eV than Si, SiC, and GaN is a promising material suitable for next-generation power devices. Among the Ga 2 O 3 ’sphases, corundum structured α-Ga 2 O 3 has attracted much attention, benefi ting from the epitaxial growth on cheap sapphiresubstrate and the existence of p-type materials with the same crystal structure. This paper comprehensively reviews theprogress on the epitaxial growth of α-Ga 2 O 3 thin fi lms and the fabrication of α-Ga 2 O 3 -based electronic and optoelectronicdevices. First, state-of-the-art technologies for improving the crystal quality of α-Ga 2 O 3 depending on growth methods arepresented. Secondly, the current research level of growth of n-type doped α-Ga 2 O 3 is comprehended. Finally, the recentprogress of electronic and optoelectronic devices, including Schottky diodes, fi eld-eff ect transistors, and solar-blind photodetectors,is summarized.

#Alpha gallium oxide · Epitaxial growth · Doping · Power device · Solar-blind photodetector

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