지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2015.12
- 수록면
- 687 - 694 (8page)
이용수
초록· 키워드
오류제보하기
A photoluminescence (PL) imaging method using a vision camera was employed to inspect InGaN/GaNquantum-well light-emitting diode (LED) epi-wafers. The PL image revealed dark spot defective regions(DSDRs) as well as a spatial map of integrated PL intensity of the epi-wafer. The Shockley-Read-Hall(SRH) nonradiative recombination coefficient increased with the size of the DSDRs. The high nonradiativerecombination rates of the DSDRs resulted in degradation of the optical properties of the LED chipsfabricated at the defective regions. Abnormal current-voltage characteristics with large forward leakageswere also observed for LED chips with DSDRs, which could be due to parallel resistances bypassing thejunction and/or tunneling through defects in the active region. It was found that the SRH nonradiativerecombination process was dominant in the voltage range where the forward leakage by tunneling wasobserved. The results indicated that the DSDRs observed by PL imaging of LED epi-wafers were highdensity SRH nonradiative recombination centers which could affect the optical and electrical propertiesof the LED chips, and PL imaging can be an inspection method for evaluation of the epi-wafers andestimation of properties of the LED chips before fabrication
목차
등록된 정보가 없습니다.
참고문헌 (27)
참고문헌 신청
E. F. Schubert / 2005 / Solid-state light sources getting smart / Science 308:1274~1278
S. Nakamura / 2013 / History of gallium-nitride based light-emitting diodes for illumination / Proc. IEEE 101:2211~2220
C. J. Raymond / 2013 / Photoluminescence metrology for LED characterization in high volume manufacturing / Proc. SPIE 8681:86810P
Y. H. Aliyu / 1997 / A luminescence mapping technique for rapid evaluation of visible-lightemitting materials used in semiconductor light-emitting diodes / Meas. Sci. Technol 8:437~440
H. -T. Kim / 2013 / A dual side electroluminescence measurement system for LED wafer manufacturing / Recent Patents on Signal Proc 3:49~55
S. Nakamura / 2013 / History of gallium-nitride based light-emitting diodes for illumination / Proc. IEEE 101:2211~2220
C. J. Raymond / 2013 / Photoluminescence metrology for LED characterization in high volume manufacturing / Proc. SPIE 8681:86810P
Y. H. Aliyu / 1997 / A luminescence mapping technique for rapid evaluation of visible-lightemitting materials used in semiconductor light-emitting diodes / Meas. Sci. Technol 8:437~440
H. -T. Kim / 2013 / A dual side electroluminescence measurement system for LED wafer manufacturing / Recent Patents on Signal Proc 3:49~55
함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Effects of Carrier Leakage on Photoluminescence Properties of GaN-based Light-emitting Diodes at Room Temperature
Current Optics and Photonics
2019 .04
-
Probeless Estimation of Electroluminescence Intensities Based on Photoluminescence Measurements of GaN-Based Light-Emitting Diodes
Current Optics and Photonics
2021 .04
-
An Effective Indium-composition to describe Photoluminescence spectral map in a 2 inch Wafer of InGaN/GaN Multiple Quantum wells
한국진공학회 학술발표회초록집
2020 .02
-
Diffusion Weighted Image에서 자화 감수성 차이에 의해 발생되는 Nyquist Ghost Artifact 감소 방안에 대한 연구
한국자기학회지
2018 .10
-
Electrical Leakage Levels Estimated from Luminescence and Photovoltaic Properties under Photoexcitation for GaN-based Light-emitting Diodes
Current Optics and Photonics
2019 .12
-
가속 전압 및 Beam Current 조절에 따른 Si wafer & GaAs wafer patterning 분석
한국분석과학회 학술대회
2023 .11
-
Luminescence properties of InGaN/GaN green light-emitting diodes grown by using graded short-period superlattice structures
한국진공학회 학술발표회초록집
2016 .02
-
Characterization of Primary Epithelial Cells Derived from Human Salivary Gland Contributing to in vivo Formation of Acini-like Structures
Molecules and Cells
2018 .06
-
Optical properties of InGaN/GaN multiple-quantum-well light-emitting diodes with superlattice and electron reservoir layer
한국진공학회 학술발표회초록집
2019 .08
-
Effect of Si-doping on the luminescence properties of InGaN/GaN green LED with graded short-period superlattice
한국진공학회 학술발표회초록집
2016 .02
-
Photoluminescence Studies of InP/InGaP Quantum Structures Grown by a Migration Enhanced Molecular Beam Epitaxy
Applied Science and Convergence Technology
2016 .07
-
Development of process for wafer reclaim without CMP
한국진공학회 학술발표회초록집
2016 .08
-
Bacterial Epi-metagenomics : Measuring DNA Methylation Patterns in Bacterial Community Level
한국미생물학회 학술대회논문집
2016 .04
-
Influence of Crystallization Temperature on the Optical Properties of MAPbBr₃ Single Crystals
Applied Science and Convergence Technology
2020 .01
-
Emission characteristics of red InGaN/GaN quantum-well light-emitting diodes
한국진공학회 학술발표회초록집
2016 .08
-
Low-Temperature Synthesis of Wafer Scale WS₂ by PECVD
한국진공학회 학술발표회초록집
2019 .02
-
3Dimensional Atom prob tomography 기법을 활용한 LED 소자의 epi 구조 분석
한국진공학회 학술발표회초록집
2015 .02
-
Direct Comparison of Optical Properties from Graphene Oxide Quantum Dots and Graphene Oxide
Applied Science and Convergence Technology
2015 .07
-
Improvement of light output of InGaN/GaN multiple-quantum wells light-emitting diode grown on silicon (111) by using nano-porous GaN layer
한국진공학회 학술발표회초록집
2016 .08
-
Changing of spectral characteristics according to emitting position in Top-emission Organic Light-emitting Diodes
한국진공학회 학술발표회초록집
2018 .02
이 논문의 저자 정보
이 논문과 함께 이용한 논문
이미지 기반 샴 네트워크를 활용한 반도체 제조 공정의 이상 분류 및 중요 구간 탐지
김정인
,
목충협
,
김현지
외 9명
대한산업공학회지
2024
.08
웨이퍼 결함 패턴 분류를 위한 보간법 기반의 준지도 대조학습
김정현
,
이제혁
지능정보연구
2024
.03
Methods to Measure the Critical Dimension of the Bottoms of Through-Silicon Vias Using White-Light Scanning Interferometry
Changhong Hyun
,
Seong
,
yong Kim
외 1명
Current Optics and Photonics
2014
.10
딥러닝 기반의 반도체 패키지 다이면 스크래치 검출 방법
박성범
,
황영배
제어로봇시스템학회 논문지
2022
.10
Automatic Defect Detection from SEM Images of Wafers using Component Tree
Sunghyon Kim
,
Il-seok Oh
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2017
.02
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2023-425-000239031