지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2021.4
- 수록면
- 173 - 179 (7page)
이용수
초록· 키워드
오류제보하기
The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.
목차
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENT
Ⅲ. RESULTS AND DISCUSSIONS
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (18)
참고문헌 신청
E. F. Schubert / 2005 / Solid-state light sources getting smart / Science 308:1274~1278
M. Anandan / 2008 / Progress of LED backlights for LCDs / J. Soc. Inf. Disp 16:287~310
T. Wu / 2018 / Mini-LED and micro-LED: promising candidates for the next generation dis-play technology / Appl. Sci 8:1557
C. J. Raymond / 2013 / Photoluminescence metrology for LED characterization in high volume manufacturing / Proc. SPIE 8681:86810P
A. Yamaguchi / 1982 / Photoluminescence intensity in InGaAsP/InP double-hetero-structures / Jpn. J. Appl. Phys 21:L297~L299
M. Anandan / 2008 / Progress of LED backlights for LCDs / J. Soc. Inf. Disp 16:287~310
T. Wu / 2018 / Mini-LED and micro-LED: promising candidates for the next generation dis-play technology / Appl. Sci 8:1557
C. J. Raymond / 2013 / Photoluminescence metrology for LED characterization in high volume manufacturing / Proc. SPIE 8681:86810P
A. Yamaguchi / 1982 / Photoluminescence intensity in InGaAsP/InP double-hetero-structures / Jpn. J. Appl. Phys 21:L297~L299
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