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논문 기본 정보

자료유형
학술저널
저자정보
Zhe Cao (Shanghai Jiao Tong University) Qiyu Huang (Shanghai Jiao Tong University) Chuanrui Zhao (Shanghai Jiao Tong University) Qing Zhang (Shanghai Jiao Tong University)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.12 No.6
발행연도
2016.1
수록면
742 - 746 (5page)

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Metal-assisted chemical etching (MACE) has been used as a promising alternativemethod to fabricate micro/nano-structures on silicon substrates inexpensively. In thispaper, profiles of deep trenches on silicon substrates, with different doping levels,fabricated by MACE were studied. A layer of interconnected gold islands was firstdeposited onto the silicon substrate as catalyst. Electrochemical etching was thenperformed in a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixturesolution with different HF-to-H2O2 ratio ρ (ρ = [HF]/([HF] + [H2O2])). Vertical deeptrenches were fabricated successfully by using this method. It was observed thateven under identical experimental condition, sidewalls with various tilting anglesand different morphology could still form on silicon substrates with differentresistivity. This possibly because with different resistivity silicon substrate, thegradient of holes in it greatly changed, and so did the final morphology. As a result,the tilting angle of etched trench sidewall can be tuned from 6 ° to 96 ° using siliconsubstrates with different resistivity and etchants with different ρ. By applying theangle-tuning technique revealed in this study, high aspect ratio patterns with verticalsidewalls could be fabricated and three-dimensional complex structures could bedesigned and realized in the future.

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