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논문 기본 정보

자료유형
학술저널
저자정보
Muhammad Fahad Bhopal (Sejong University) 이두원 (세종대학교) 이수홍 (세종대학교)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.12 No.5
발행연도
2016.1
수록면
651 - 659 (9page)

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Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon)substrates has been researched by various research groups for theproduction of photovoltaic cells. High quality pc-Si depositionon foreign substrates with superior optical properties isconsidered to be the main hurdle in cell fabrication. Metalinduced crystallization (MIC) is one of the renowned techniquesused to produce this quality of material. In the current study, analuminum induced crystallization (AIC) method was adopted toproduce pc-Si thin-film on aluminum nitride (AlN) substrate by aseed layer approach. Aluminum and a-Si layer were depositedusing an e-beam evaporator. Various annealing conditions wereused in order to investigate the AIC grown pc-Si seed layers forprocess optimization. The effect of thermal annealing on grainsize, defects preferentially crystallographic orientation of thegrains were analyzed. Surface morphology was studied using anoptical microscope. Poly-silicon film with a crystallinity fractionbetween 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grainsize of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) alsoshowed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si wasevaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction(GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layerwith good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and shorttime frames.

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