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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2005.1
- 수록면
- 169 - 173 (5page)
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Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 300 ℃ and 400 ℃ for five hours due to crystallization of Ni thin films but the value increased over 450 ℃ because of Ni thin film's oxidation. Resistivity values of Ni thin films were in the range of 10.5 μΩ㎝/℃ to 2.84×104 μΩ㎝/℃ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/℃ to 5,630 ppm/℃ in the temperature range of 0 ℃～150 ℃. The results demonstrate that Ni oxide thin films of annealing treatment at 400 ℃ for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.
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참고문헌 (8)
참고문헌 신청
/ 1974. / Integrated silicon anemometer : 425 ~
/ 1985. / high-performance mass-flow sensor with integrated laminar flow micro-channels : 361 ~
/ 1997. / Electrical properties of nickel-zirconia cermet films for temperature and flow-sensor application : 33 ~
/ 1997. / Microstructure and temperature coefficient of resistance of platinum films (36) : 834 ~
/ 1998. / Design of a new sensor for mass flow controller using thin-film technology based on an analytical thermal model : 3559 ~
/ 1985. / high-performance mass-flow sensor with integrated laminar flow micro-channels : 361 ~
/ 1997. / Electrical properties of nickel-zirconia cermet films for temperature and flow-sensor application : 33 ~
/ 1997. / Microstructure and temperature coefficient of resistance of platinum films (36) : 834 ~
/ 1998. / Design of a new sensor for mass flow controller using thin-film technology based on an analytical thermal model : 3559 ~
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