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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제5권 제3호
- 발행연도
- 2004.1
- 수록면
- 104 - 108 (5page)
이용수
초록· 키워드
오류제보하기
Problems of overlap errors and side-lobe printing by the design rule reduction in the lithography process using attenuated phase-shifting masks(attPSM) have been serious. Overlap errors and side-lobes can be simultaneously solved by the rule-based correction using scattering bars with the rules extracted from test patterns. Process parameters affecting the attPSM lithography simulation have been determined by the fitting method to the process data. Overlap errors have been solved applying the correction rules to the metal patterns overlapped with contact/via. Moreover, the optimal insertion rule of the scattering bars has made it possible to suppress the side-lobes and to get additional pattern fidelity at the same time.
목차
등록된 정보가 없습니다.
참고문헌 (13)
참고문헌 신청
/ 1991. / Handbook of VLSI Microlithography : 472 ~
/ 1995. / Effect of pattern density for contact windows in an attenuated phase shift mask 2440 : 278 ~
/ 1998. / Attenuated phase-shift masks reducing side-lobe effect in DRAM peripheral circuit region 3236 : 544 ~
/ 1998. / High-transmittance rim-type attenuated phase-shift masks for sub-0.2-μm hole patterns 3412 : 601 ~
/ 1999. / Imaging contrast improvement for 160-nm line features using subresolution assist features with binary six percent ternary attenuated phase-shift mask with process-
/ 1995. / Effect of pattern density for contact windows in an attenuated phase shift mask 2440 : 278 ~
/ 1998. / Attenuated phase-shift masks reducing side-lobe effect in DRAM peripheral circuit region 3236 : 544 ~
/ 1998. / High-transmittance rim-type attenuated phase-shift masks for sub-0.2-μm hole patterns 3412 : 601 ~
/ 1999. / Imaging contrast improvement for 160-nm line features using subresolution assist features with binary six percent ternary attenuated phase-shift mask with process-
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