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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2004.1
- 수록면
- 911 - 915 (5page)
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초록· 키워드
오류제보하기
In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off-state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from 1.0x1013 /cm2 to 1.0x1012 /cm2, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.
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참고문헌 (7)
참고문헌 신청
/ 1987. / An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process ED-34, (7) : 926 ~
/ 1992. / Integration of power LDMOS into a low-voltage 0.5 m BiCMOS technology : 27 ~
/ 1994. / Heat generation in semi- conductor devices 75 (2) : 942 ~
/ 1997. / A novel high-frequency LDMOS transistor using an extended gate RESURF technology : 45 ~
/ 1999.,June / Effects of drain structures on the hot-carrier degradation of high-voltage LDMOS transistors 34 : 542 ~
/ 1992. / Integration of power LDMOS into a low-voltage 0.5 m BiCMOS technology : 27 ~
/ 1994. / Heat generation in semi- conductor devices 75 (2) : 942 ~
/ 1997. / A novel high-frequency LDMOS transistor using an extended gate RESURF technology : 45 ~
/ 1999.,June / Effects of drain structures on the hot-carrier degradation of high-voltage LDMOS transistors 34 : 542 ~
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