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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.16 No.5
- 발행연도
- 2016.10
- 수록면
- 630 - 634 (5page)
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We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using sp3d5s* is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional Schrödinger-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic (I<SUB>ON</SUB> > 100 μA/μm) that broken-gap TFETs normally have.
목차
Abstract
I. INTRODUCTION
II. SIMULATION METHODS
III. SIMULATION RESULTS
IV. CONCLUSION
REFERENCES
참고문헌 (12)
참고문헌 신청
[학술지(정기간행물)] - A. M. Ionescu / 2011 / / Nature 479 : 329 ~
[학술지(정기간행물)] - B. M. Borg / 2010 / / Nano letters 10 : 4080 ~
[학술대회논문] - G. Zhou / 2012 / / Electron Devices Meeting (IEDM), 2012 IEEE International (IEEE, 2012) 32.6 : 1 ~
[학술지(정기간행물)] - J. Knoch / 2010 / / Electron Device Letters, IEEE 31 : 305 ~
[학술지(정기간행물)] - A. W. Dey / 2013 / / Electron Device Letters, IEEE 34 : 211 ~
[학술지(정기간행물)] - B. M. Borg / 2010 / / Nano letters 10 : 4080 ~
[학술대회논문] - G. Zhou / 2012 / / Electron Devices Meeting (IEDM), 2012 IEEE International (IEEE, 2012) 32.6 : 1 ~
[학술지(정기간행물)] - J. Knoch / 2010 / / Electron Device Letters, IEEE 31 : 305 ~
[학술지(정기간행물)] - A. W. Dey / 2013 / / Electron Device Letters, IEEE 34 : 211 ~
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UCI(KEPA) : I410-ECN-0101-2017-569-001646107