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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.19 No.1
- 발행연도
- 2019.2
- 수록면
- 50 - 62 (13page)
- DOI
- 10.5573/JSTS.2019.19.1.050
이용수
초록· 키워드
오류제보하기
A charge-based quantum correction model for the gate and drain current noise in nanoscale MOSFETs is presented. The model is analytically formulated by incorporating the quantum mechanical (QM) effects in the inversion layer into the classical noise models. For efficient computation, the quantum mechanical models are calculated for the lowest quantized energy level, which is a reasonable approximation. On the basis of the quantum correction model of the oxide voltage and oxide thickness, the gate leakage tunneling current and 1/f noise model are evaluated for ultrathin gate oxide MOS devices. The quantum models of the drain current and noise are obtained by accounting for the QM effects through the inversion charge density model. For the 1/f drain current noise due to the number fluctuation components, the classical and QM models behave in a quantitatively similar fashion to the random telegraph signal (RTS) noise in both the weak and strong inversion, showing a noticeable deviation in the saturation region. It is also shown that QM effects in the inversion layer are important to the thermal noise modeling and, for the accurate noise modeling of nanoscale MOSFETs, become more pronounced for higher doping concentration and thinner oxide thickness.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. QUANTUM CORRECTION FOR COMPACT MODELING
Ⅲ. QUANTUM EFFECTS ON GATE LEAKAGE CURRENT AND NOISE MODEL
Ⅳ. QUANTUM EFFECTS ON DRAIN CURRENT AND NOISE MODEL
Ⅴ. RESULTS AND DISCUSSION
Ⅵ. CONCLUSION
REFERENCES
참고문헌 (38)
참고문헌 신청
T. Ando, A. B. Fowler, and F. Stern, “Electronic properties of two-dimensional systems,” Rev. Mod. Phys., Vol. 54, No. 2, pp. 437-672, 1982.
J. Z. Huang, W. C. Chew, M. Tang, and L. Jiang, “Efficient simulation and analysis of quantum ballistic transport in nanodevices with AWE,” IEEE Trans. Electron Devices, Vol. 59, No. 2, pp. 932-938, 2012.
M. A. Karim and A. Haque, “A physically based accurate model for quantum mechanical correction to the surface potential of nanoscale MOSFETs,” IEEE Trans. Electron Devices, Vol. 57, No. 2, pp. 496-502, 2010.
X. Zhang and M. H. White, “A quantum mechanical treatment of low frequency noise in high-K NMOS transistors with ultra-thin gate dielectrics,” Solid-State Electron., Vol. 78, No. 12, pp. 131-135, 2012.
C. Moglestue, “Self-consistent calculation of electron and ole inversion charges at silicon-silicon dioxide interfaces,” J. Appl. Phys., Vol. 59, No. 9, pp. 3175-3183, 1986.
J. Z. Huang, W. C. Chew, M. Tang, and L. Jiang, “Efficient simulation and analysis of quantum ballistic transport in nanodevices with AWE,” IEEE Trans. Electron Devices, Vol. 59, No. 2, pp. 932-938, 2012.
M. A. Karim and A. Haque, “A physically based accurate model for quantum mechanical correction to the surface potential of nanoscale MOSFETs,” IEEE Trans. Electron Devices, Vol. 57, No. 2, pp. 496-502, 2010.
X. Zhang and M. H. White, “A quantum mechanical treatment of low frequency noise in high-K NMOS transistors with ultra-thin gate dielectrics,” Solid-State Electron., Vol. 78, No. 12, pp. 131-135, 2012.
C. Moglestue, “Self-consistent calculation of electron and ole inversion charges at silicon-silicon dioxide interfaces,” J. Appl. Phys., Vol. 59, No. 9, pp. 3175-3183, 1986.
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