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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.15 No.2
- 발행연도
- 2015.4
- 수록면
- 249 - 254 (6page)
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초록· 키워드
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Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below 300°C. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller V<SUB>th</SUB> shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENT
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (14)
참고문헌 신청
1. [학술지(정기간행물)] - By Elvira M.C. Fortunato / 2005 / Fully Transparent ZnO Thin Film Transistor Produced at Room Temperature / Advanced Materials 17 (5) : 590 ~ 594
2. [학술지(정기간행물)] - Seok-Woon Lee / 1996 / Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization / Electron Device Letters, IEEE 17 (4) : 160 ~ 162
3. [학술지(정기간행물)] - Kenji Nomura / 2004 / Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors / Nature 432 (7016) : 488 ~ 492
4. [학술지(정기간행물)] - Seok-Jun Seo / 2008 / High performance solution-processed amorphous zinc tin oxide thin film transistor / Journal of Physics D: Applied Physics 42 (3) : 035106 ~
5. [학술지(정기간행물)] - Keunkyu Song / 2009 / Solution processed invisible all-oxide thin film transistors / Journal of Materials Chemistry 19 (46) : 8881 ~ 8886
2. [학술지(정기간행물)] - Seok-Woon Lee / 1996 / Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization / Electron Device Letters, IEEE 17 (4) : 160 ~ 162
3. [학술지(정기간행물)] - Kenji Nomura / 2004 / Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors / Nature 432 (7016) : 488 ~ 492
4. [학술지(정기간행물)] - Seok-Jun Seo / 2008 / High performance solution-processed amorphous zinc tin oxide thin film transistor / Journal of Physics D: Applied Physics 42 (3) : 035106 ~
5. [학술지(정기간행물)] - Keunkyu Song / 2009 / Solution processed invisible all-oxide thin film transistors / Journal of Materials Chemistry 19 (46) : 8881 ~ 8886
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