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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.24 No.4
- 발행연도
- 2024.8
- 수록면
- 379 - 386 (8page)
- DOI
- 10.5573/JSTS.2024.24.4.379
이용수
초록· 키워드
오류제보하기
We demonstrated that the indium composition ratio in the channel layer significantly affects the electrical stability of top-gate self-aligned (TG SA) coplanar structure indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) under self-heating stress (SHS) conditions. The transfer curves of the In-poor IGZO TFT continuously shifted in the positive direction with extended stress time, without a significant change in the subthreshold swing (SS) and field-effect mobility (μFE) values during SHS application. In contrast, the transfer curve of the In-rich IGZO TFT shifted in the negative direction until the SHS time reaches 1200 s, after which it shifted in the positive direction with extended stress time. Besides, SS and μFE values continuously increased as the SHS time increased in the In-rich IGZO TFTs. The unusual behavior of the TG SA coplanar In-rich IGZO TFT during SHS is mainly attributed to the more pronounced diffusion of hydrogen (H) atoms from the n+-IGZO source/drain extension region to the IGZO channel region in the In-rich IGZO than in the In-poor IGZO. The H atoms diffused into the IGZO channel layer act as either shallow donors or deep acceptors, depending on their concentration and environmental conditions, thus causing the abnormal behavior of IGZO TFTs during SHS.
목차
Abstract
I. INTRODUCTION
II. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (23)
참고문헌 신청
T. Kamiya et al., “Present status of amorphous In-Ga-Zn-O thin-film transistors,” Science and Technology of Advanced Materials, Vol. 11, No. 4, pp. 044305, Sep., 2010.
I. Hendy et al., “Development of High-Performance IGZO Backplanes for Displays,” Information Display, Vol. 38, No. 5, pp. 60-67, Sep., 2022.
J. Park et al., “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films, Vol. 520, No. 6, pp. 1679-1693, Jan., 2012.
B. Lu et al., “Amorphous oxide semiconductors: From fundamental properties to practical applications,” Current Opinion in Solid State and Materials Science, Vol. 27, No. 4, pp. 101092, Aug., 2023.
T. Kamiya et al., “Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping,” Journal of Display Technology, Vol. 5, No. 7, pp. 273-288, Jul., 2009.
I. Hendy et al., “Development of High-Performance IGZO Backplanes for Displays,” Information Display, Vol. 38, No. 5, pp. 60-67, Sep., 2022.
J. Park et al., “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films, Vol. 520, No. 6, pp. 1679-1693, Jan., 2012.
B. Lu et al., “Amorphous oxide semiconductors: From fundamental properties to practical applications,” Current Opinion in Solid State and Materials Science, Vol. 27, No. 4, pp. 101092, Aug., 2023.
T. Kamiya et al., “Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping,” Journal of Display Technology, Vol. 5, No. 7, pp. 273-288, Jul., 2009.
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