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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.6 No.3
- 발행연도
- 2006.9
- 수록면
- 189 - 198 (10page)
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초록· 키워드
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A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. MODEL FORMULATION
Ⅲ. DRAIN CURRENT AND CONDUCTANCES
Ⅳ. LT-MISHEMT AND PERFECT INSULATOR MISHEMT
Ⅴ. RESULTS AND DISCUSSION
Ⅵ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
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